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Effects of incident-light-intensity-dependent band gap narrowing on barrier heights of p-doped AlxGa1−xAs/GaAs heterojunction devices

✍ Scribed by Pitigala, P.K.D.D.P.; Lao, Y.F.; Perera, A.G.U.


Book ID
122661928
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
357 KB
Volume
63
Category
Article
ISSN
1350-4495

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