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Effects of Hydroxyl Groups in Gate Dielectrics on the Hysteresis of Organic Thin Film Transistors

✍ Scribed by Gi Choi, Chaun; Bae, Byeong-Soo

Book ID
115503873
Publisher
The Electrochemical Society
Year
2007
Tongue
English
Weight
425 KB
Volume
10
Category
Article
ISSN
1099-0062

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πŸ“œ SIMILAR VOLUMES

Root cause of hysteresis in organic thin
Root cause of hysteresis in organic thin film transistor with polymer dielectric
✍ Young H. Noh; S. Young Park; Soon-Min Seo; Hong H. Lee πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 133 KB

Moisture is identified as the root cause of the hysteresis problem that can occur in the organic thin film transistor with a polymer gate dielectric. The hysteresis problem can be eliminated by simply drying the dielectric layer sufficiently prior to the deposition of semiconductor. The moisture eff