## Abstract A series of lightly Tlβdoped CdO thin films (1%, 1.5%, 2%, 2.5%, and 3%) have been prepared by a vacuum evaporation method on glass and Si wafer substrates. The prepared films were subjected to structural study by Xβray diffraction, optical characterisation by UVβVISβNIR absorption spec
Effects of high hydrogen dilution on the optical and electrical properties in B-doped nc-Si:H thin films
β Scribed by H. Chen; M.H. Gullanar; W.Z. Shen
- Book ID
- 108165602
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 387 KB
- Volume
- 260
- Category
- Article
- ISSN
- 0022-0248
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We report on the effects of deposition pressure P d on the growth and properties of the B-doped nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition (HWCVD) at very high hydrogen dilution of 98.8%. We found that the crystallinity of nc-Si:H or mc-Si:H films is not
## Abstract The systematical study of the admixture of small amounts of groupβII elements (<1 at%) with Raman and photoluminescence spectroscopy reveal an increase in the Raman response of the cationβanion vibration modes accompanied with the generation of a new broad emission band at 1.35 eV in th