Effects of high-concentration phosphorus doping on crystal quality and lattice strain in SiGe HBTs

✍ Scribed by Katsuya Oda; Makoto Miura; Hiromi Shimamoto; Katsuyoshi Washio

• Book ID: 108060520
• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 425 KB
• Volume: 254
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2008.02.123