Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium–Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch Structure

✍ Scribed by Luo, Dongxiang; Xu, Hua; Li, Min; Tao, Hong; Wang, Lei; Peng, Junbiao; Xu, Miao

• Book ID: 121704027
• Publisher: IEEE
• Year: 2014
• Tongue: English
• Weight: 739 KB
• Volume: 61
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2013.2292552