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Effects of electron-interface-phonon interaction on resonant tunnelling in double-barrier heterostructures

โœ Scribed by Mori, N; Taniguchi, K; Hamaguchi, C

Book ID
120361116
Publisher
Institute of Physics
Year
1992
Tongue
English
Weight
269 KB
Volume
7
Category
Article
ISSN
0268-1242

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A theoretical analysis of the effect of scattering centers on tunneling current in amorphous (a-SiC:H/a-Si:H/a-SiC:H) double barrier heterostructures (DBH) is presented in terms of the transfer matrix and Airy function approaches. We consider one localized center in the well of the DBH and take into