GaN-Based Quantum-Effect Electron Device
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Shirakashi, J. ;Shimizu, M. ;OkumuraShirakashi, H.
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Article
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1999
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John Wiley and Sons
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English
β 153 KB
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We theoretically discuss GaN-based quantum-effect electron devices using quantum interference of hot electron waves in the conduction band of the large bandgap collector barrier. In this type of device, the quantum interference of electrons plays a main role in the operation principle and originates