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Effects of electron-beam irradiation on the properties of CVD Si3N4 films in MNOS structures

โœ Scribed by Ma, T. P.


Book ID
121476644
Publisher
American Institute of Physics
Year
1976
Tongue
English
Weight
690 KB
Volume
47
Category
Article
ISSN
0021-8979

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Swelling and optical properties of Si3N4
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Silicon nitride layers of 140 nm thickness were deposited on silicon wafers by low pressure chemical vapour deposition (LPCVD) and irradiated at GANIL with Pb ions of 110 MeV up to a maximum fluence of 4 ร‚ 10 13 cm ร€2 . As shown in a previous work these irradiation conditions, characterized by a pre