Effects of electrical and temperature stress on polysilicon resistors for CMOS technology applications

✍ Scribed by Kong-Beng Thei; Hung-Ming Chuang; Sheng-Fu Tsai; Chun-Tsen Lu; Xin-Da Liao; Kuan-Ming Lee; Wen-Chau Liu

• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 592 KB
• Volume: 31
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.2002.1048

✦ Synopsis

The effects of electrical and temperature stress on polysilicon resistors for CMOS technology applications are studied. Under a fixed square number, the peak current density (J peak ) is increased with decreasing the polysilicon resistor width W . The time-to-fail value of the polysilicon resistor is decreased with increasing the electrical and temperature stress. A simple empirical formula is proposed in this study to predict the maximum current density (J max ) and lifetime of polysilicon resistors. Under a fixed current density (1.0 × 10 6 A cm -2 ), the activation energies (E a ) for n + and p + polysilicon resistors at different temperatures are 0.67 and 0.48 eV, respectively. In addition, at a fixed temperature of 473 K, the current factors for n + and p + polysilicon resistors are 1.57 × 10 -5 and 1.30×10 -5 cm 2 /A, respectively, under different current densities. Therefore, these precise reliability performances offer promise for ULSI design and fabrication.