Effects of doping impurity and growth orientation on dislocation generation in GaAs crystals grown from the melt: A qualitative finite-element study

✍ Scribed by Zhu, X. A.; Tsai, C. T.

• Book ID: 120155700
• Publisher: American Institute of Physics
• Year: 2000
• Tongue: English
• Weight: 412 KB
• Volume: 88
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.1287600