𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effects of doping concentration on the microstructural and optoelectrical properties of boron doped amorphous and nanocrystalline silicon films

✍ Scribed by Song, Chao; Wang, Xiang; Huang, Rui; Song, Jie; Guo, Yanqing

Book ID
120586508
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
972 KB
Volume
142
Category
Article
ISSN
0254-0584

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Electrical and optical properties of bor
Electrical and optical properties of boron-doped nanocrystalline silicon films deposited by PECVD
✍ Li, Zhe ;Zhang, Xiwen ;Han, Gaorong πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 221 KB

## Abstract Boron‐doped nanocrystalline silicon (nc‐Si:H) films were deposited by plasma‐enhanced chemical vapor deposition (PECVD). A variety of techniques, including X‐ray diffraction (XRD), Raman scattering (RS), UV–Vis–NIR spectroscopy and conductivity measurement were used to characterize the

Effects of deposition pressure on the mi
Effects of deposition pressure on the microstructural and optoelectrical properties of B-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition
✍ Peiqing Luo; Zhibin Zhou; Youjie Li; Shuquan Lin; Xiaoming Dou; Rongqiang Cui πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 474 KB

We report on the effects of deposition pressure P d on the growth and properties of the B-doped nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition (HWCVD) at very high hydrogen dilution of 98.8%. We found that the crystallinity of nc-Si:H or mc-Si:H films is not