A series of (\mathrm{LaCr}{1-x} M{x} \mathrm{O}{3}(M=\mathrm{Mg}, \mathrm{Cu}, \mathrm{Zn}, \mathrm{Ni})) ceramics was fabricated by a conventional sintering process in air and Ar gas. Relative density, electrical conductivity, and magnetic susceptibility were measured to investigate the electrical conduction mechanism of the doped (\mathrm{LaCrO}{3}) ceramic. The apparent density was improved up to (95 %) of theoretical density, especially in the cases of (M=\mathrm{Cu}^{2+}) and (\mathrm{Zn}^{2+}). The electrical conductivity ((\sigma)) increased with increasing quantities of doped divalent cation ((x)), and (\log (\sigma T)) showed a linear relationship to ((1 / T)). Magnetic data and chemical analysis indicated that the presence of (\mathrm{Cr}^{4+}), rather than oxygen deficiencies, is preferential for the charge compensation. As a result, the electrical conduction was substantially governed by the hopping of small polarons between (\mathrm{Cr}^{3+}) and (\mathrm{Cr}^{4+}) ions. The substitution of (\mathrm{Ni}) ions resulted in lower than expected unit cell volumes, somewhat different conductivities, and a different antiferromag. netic response, all of which pointed to the role of (\mathrm{Ni}^{3+}) as of the source of an additional band conduction mechanism. 1994 Academic Press, Inc.