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Effects of diffusion annealing on the electrophysical and photoluminescent characteristics of gallium arsenide diodes

โœ Scribed by G. P. Proshko; O. N. Kurennaya; I. A. Shmerkin; V. I. Shveikin; T. S. Goncharova; A. V. Vil'mon

Publisher
Springer US
Year
1971
Tongue
English
Weight
442 KB
Volume
14
Category
Article
ISSN
0021-9037

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Silicon pn diodes were fabricated by ion implantation of B and P ions with different doses and subsequent annealing processes. Room temperature photoluminescence (PL) were investigated and the factors affecting the PL intensity were analyzed. Results show that both kinds of pn diodes have PL peak ce