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Effects of 4He coverage and interface condition on the spin relaxation in 3HeA1

✍ Scribed by Qiang Jiang; Haruo Rojima


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
190 KB
Volume
165-166
Category
Article
ISSN
0921-4526

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✦ Synopsis


Effects of moving magnetic field3relative to sansor and coating cell surfaces with 4 He on the spin density relaxation time in He-A were measured.

In the upper temperature side of the phase, where A f

IN interface is presen i in the cell, the relaxation time is strongly modified by the the sur ace condition and magnet position changes.

In the lower temperature side of the phase, where Al/A2 interface is present, the relaxation time is not affected by either changes.


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