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Effectiveness of high energy ion beam techniques for the characterization of mesoporous low dielectric-constant materials

โœ Scribed by S Thevuthasan; S Baskaran; K Domansky; J Liu; M Engelhard

Book ID
114171845
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
124 KB
Volume
161-163
Category
Article
ISSN
0168-583X

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Preferential c-axis orientation and dielectric constants of thin BaTiO3 films deposited on Si wafers by a low energy ion beam assisted deposition technique
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Thin BaTiO 3 films were deposited on thin TiN film covered Si wafers by ion beam assisted deposition comprising of two electron beam evaporators for evaporating Ti and BaCO 3 and an electron cyclotron resonance ion source for ionizing O 2 . Films deposited using 25 eV oxygen ion beams had many small