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Effective threshold voltage control in GaN nanowire field-effect transistors with a dual-gate structure

✍ Scribed by Hyo-Suk Kim, J. -R. Kim, Ju-Jin Kim, Jeong-O. Lee

Book ID: 119937142
Publisher: The Korean Physical Society
Year: 2012
Tongue: English
Weight: 207 KB
Volume: 61
Category: Article
ISSN: 0374-4884
DOI: 10.3938/jkps.61.2100

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## Abstract The concept of using ion conducting membranes (50–150 μm thick) for gating low‐voltage (1 V) organic field‐effect transistors (OFETs) is attractive due to its low‐cost and large‐area manufacturing capabilities. Furthermore, the membranes can be tailor‐made to be ion conducting in any de