It is necessary to take quantum effects into account in the design of nanometerscale high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). To achieve this, an effective potential method is applied to drift-diffusion (DD)-based simulations of the threshold-voltage
Effective potential for moment-method simulation of quantum devices
β Scribed by A.M. Kriman; J.-R. Zhou; N.C. Kluksdahl; H.H. Choi; D.K. Ferry
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 391 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0038-1101
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Simulators of semiconductor devices have to solve systems of equations generated by the discretization of partial differential equations, which are the most time-consuming part of the simulation process. Therefore, the use of an effective method to solve these linear systems is essential. In this wo
Four methods for deriving partial atomic charges from the Ε½ quantum chemical electrostatic potential CHELP, CHELPG, Merz-Kollman, and . RESP have been compared and critically evaluated. It is shown the charges strongly depend on how and where the potential points are selected. Two alternative method