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Effective lateral diffusion length in Npn AlGaAs/GaAs heterojunction bipolar transistors

โœ Scribed by William Liu


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
581 KB
Volume
35
Category
Article
ISSN
0038-1101

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Current gain deterioration in carbon-dop
โœ T. Ishibashi; H. Sugahara; H. Ito; T. Nittono; K. Nagata; O. Nakajima; J. Nagano ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 294 KB

We investigated the current gain deterioration in carbon-doped AIGaAs/GaAs heterojunction bipolar transitors (HBTs). Bias stress tests showed that mechanical stress can accelerate the gain reduction, since HBTs with a thicker SiN passivation layer have a shorter device life. The longest life was obt