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Effective barrier height, conduction-band offset, and the influence of p-type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface

✍ Scribed by T. Shen; M. Elliott; R. H. Williams; D. Westwood


Book ID
121738747
Publisher
American Institute of Physics
Year
1991
Tongue
English
Weight
663 KB
Volume
58
Category
Article
ISSN
0003-6951

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