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Effect of well width variation on type-I/type-II photoluminescence in GaAs/AlAs single quantum wells

โœ Scribed by L.J. Blue; T. Daniels-Race; C.N. Yeh; L.E. McNeil


Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
197 KB
Volume
21
Category
Article
ISSN
0749-6036

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โœฆ Synopsis


We have investigated type-I/type-II transitions in MBE-grown 20, 35, and 50 A หšGaAs/AlAs single quantum wells using photoluminescence (PL) spectroscopy. The 20 and 50 A หšwells show a type-I peak, while the 35 A หšwell has PL peaks corresponding to both type-I and type-II transitions. Peak assignment for the 35 A หš-well sample is based upon excitation intensity dependent measurements, and the strength of the type-II transition in this sample is attributed to -X mixing. Superperiodicity has been put forth as a possible explanation for -X mixing effects in superlattice structures, but the observation of this phenomenon in a single quantum well structure suggests that superperiodicity is not required for -X mixing to occur.


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