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Effect of various factors upon the stoichiometry of GaAs homoepitaxial layers grown by LPE

✍ Scribed by Govorkov, A. V. ;Novikov, A. G. ;Milvidskii, M. G. ;Shlenskii, A. A. ;Fomin, V. G. ;Yugova, T. G.

Publisher: John Wiley and Sons
Year: 1994
Tongue: English
Weight: 715 KB
Volume: 144
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2211440113

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