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Effect of vacancies on nucleation of oxide precipitates in silicon

โœ Scribed by V.V. Voronkov; R. Falster


Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
115 KB
Volume
5
Category
Article
ISSN
1369-8001

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Effect of vacancies on copper precipitat
โœ Wang, Weiyan ;Yang, Deren ;Ma, Xiangyang ;Que, Duanlin ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 424 KB

## Abstract The effect of vacancies induced by the prior rapid thermal processing (RTP) at 900โ€“1200 ยฐC in Ar on copper (Cu) precipitation in nโ€type silicon has been investigated by means of optical microscopy and transmission electron microscopy. It was revealed that in the sample without the prior