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Effect of transition metal impurity MN on the electronic properties of amorphous semiconductor Ge20S80 − xBix

✍ Scribed by V.K. Bhatnagar; K.L. Bhatia; D.P. Gosain; V.K. Jain


Book ID
119443849
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
593 KB
Volume
92
Category
Article
ISSN
0022-3093

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