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Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2interface of a MOS transistor

✍ Scribed by A. É. Atamuratov; S. Z. Zainabidinov; A. Yusupov; Kh. S. Daliev; K. M. Adinaev

Book ID
110120781
Publisher
Springer
Year
1997
Tongue
English
Weight
41 KB
Volume
42
Category
Article
ISSN
1063-7842

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