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Effect of thermal annealing of high temperature growth [(GaAs)m(Fe)n]pcomposite films on GaAs(001) by molecular beam epitaxy

โœ Scribed by A. T. M. K. Jamil; H. Noguchi

Book ID
107679884
Publisher
Springer-Verlag
Year
2011
Tongue
English
Weight
376 KB
Volume
85
Category
Article
ISSN
0019-5480

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Growth of high quality of ZnSe epilayers
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โœ Jin-Sang Kim; Jong-Hyeng Song; Sang-Hee Suh ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 247 KB

We have investigated the structural properties of ZnSe epilayers that were grown by molecular beam epitaxy on (001) GaAs substrate with different tilt angles. Two-dimensional growth mode increased with increasing tilt of (001) GaAs toward [010] direction. This was confirmed by atomic force microscop