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Effect of the impurity atmosphere formation on the orientation of straight edge dislocations in silicon

โœ Scribed by G.N. Gaidukov; S.K. Maksimov; A.A. Podrezov


Book ID
116061423
Publisher
Elsevier Science
Year
1983
Weight
395 KB
Volume
17
Category
Article
ISSN
0036-9748

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The dislocation is considered as a string of impurity sites with one unique energy of attraction for impurities. The impurities are considered as non-interacting. This simple model is used to exemplify the consequences of a statistical-mechanical treatment of condensed impurity atmospheres. As rega