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Effect of temperature on the binding energy of excited states in a ridge quantum wire

✍ Scribed by R. Khordad

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 211 KB
Volume: 41
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2008.10.004

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✦ Synopsis

In this paper, we study the influence of temperature on the binding energy of a hydrogenic donor impurity in a ridge quantum wire using a variational procedure within the effective mass approximation. We calculate the binding energy of the donor impurity in its ground state and first few excited states in a V-groove GaAs=Ga 1Àx Al x As quantum wire for various impurity positions and different temperatures. We find that the temperature and impurity locations can have important effect in the binding energy of the donor impurity.

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