Effect of substrate temperature on the s
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S.V. Jagadeesh Chandra; S. Uthanna; G. Mohan Rao
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Article
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2008
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Elsevier Science
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English
โ 669 KB
dc reactive magnetron sputtering technique was employed for deposition of tantalum oxide films on quartz and silicon substrates by sputtering of pure tantalum target in the presence of oxygen and argon gases under various substrate temperatures in the range 303-973 K. The variation of cathode potent