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Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs

✍ Scribed by A. V. Sakharov; W. V. Lundin; E. E. Zavarin; M. A. Sinitsyn; A. E. Nikolaev; S. O. Usov; V. S. Sizov; G. A. Mikhailovsky; N. A. Cherkashin; M. Hytch; F. Hue; E. V. Yakovlev; A. V. Lobanova; A. F. Tsatsulnikov

Book ID
111444361
Publisher
Springer
Year
2009
Tongue
English
Weight
260 KB
Volume
43
Category
Article
ISSN
1063-7826

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The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al 0.25 Ga 0.75 N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20-350 K. Using the quantitative mobility spectrum analysis (QMSA) method, it was sh