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Effect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and Kubo-Greenwood mobility calculations

✍ Scribed by Bonno, Olivier; Barraud, Sylvain; Mariolle, Denis; Andrieu, François


Book ID
119959844
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
570 KB
Volume
103
Category
Article
ISSN
0021-8979

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