✦ LIBER ✦
Effect of source extension junction depth and substrate doping concentration on I-MOS device characteristics
✍ Scribed by Woo Young Choi; Jae Young Song; Jong Duk Lee; Byung-Gook Park
- Book ID
- 114618232
- Publisher
- IEEE
- Year
- 2006
- Tongue
- English
- Weight
- 134 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0018-9383
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