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Effect of resistivity and current density on photoluminescence in porous silicon produced at low HF concentration

✍ Scribed by Gaburro, Zeno; You, Hoydoo; Babić, Davorin

Book ID
120382964
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
360 KB
Volume
84
Category
Article
ISSN
0021-8979

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In this paper, the effective densities of states for the conduction and valence bands, Nc and N,, the intrinsic carrier concentration ni and the ionized doping concentration in strained Si,\_,Ge, layers grown on (001) Si substrates are analytically calculated, and their temperature and Ge fraction d