Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells

✍ Scribed by Zeng, Z. M.; Khalili Amiri, P.; Rowlands, G.; Zhao, H.; Krivorotov, I. N.; Wang, J.-P.; Katine, J. A.; Langer, J.; Galatsis, K.; Wang, K. L.; Jiang, H. W.

• Book ID: 120055908
• Publisher: American Institute of Physics
• Year: 2011
• Tongue: English
• Weight: 670 KB
• Volume: 98
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.3556615