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Effect of residual radiation-induced defects on characteristics of ion-implanted gallium arsenide p-n junctions

✍ Scribed by B. S. Azikov; V. N. Brudnyi; A. P. Vyatkin; M. A. Krivov; V. M. Lupin; L. L. Shirokov

No coin nor oath required. For personal study only.

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