Effect of re-irradiation on radiation damage in diamond
โ Scribed by Nikolaenko, V. A.; Krasikov, E. A.; Amayev, A. D.
- Book ID
- 120450054
- Publisher
- Springer US
- Year
- 2013
- Tongue
- English
- Weight
- 155 KB
- Volume
- 114
- Category
- Article
- ISSN
- 1573-8205
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Results are presented of a study of radiation damage by high-temperature electron irradiation in submicron MOS FETs with standard thermal oxide and nitrogen annealed gate oxide as gate dielectric material. n-Channel 15 2 MOS FETs were irradiated by 2-MeV electrons for the fluence of 1 3 10 e / cm a
The paper reviews measurements of the radiation hardness of CVD diamond for 24 GeV/c proton irradiation at fluences up to 5"1015 protons/cm 2. The results not only show radiation damage but also an annealing effect that is dominant at levels around 1015 protons/cm 2. A model describing both effects