Effect of rare-earth elements on luminescence properties of ZnSe-based Chalcogenide scintillators

✍ Scribed by K.A. Katrunov; N.G. Starzhinskiy; Yu.V. Malyukin; V.I. Silin; I.M. Zenya; G. Tamulaitis

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 145 KB
• Volume: 622
• Category: Article
• ISSN: 0168-9002
• DOI: 10.1016/j.nima.2010.06.275

✦ Synopsis

Afterglow in two types of semiconductor scintillators, ZnSe(Te) and ZnSe(O,Al), after pulsed X-ray excitation is studied. It is demonstrated that the afterglow can be significantly reduced by annealing in a zinc-rich atmosphere and co-doping by rare-earth elements. The co-doping also decreases the light yield of the ZnSe(Te) crystal, but has a minor influence on the light yield of annealed ZnSe(O,Al). The influence of the co-doping on carrier trapping is discussed.