Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface δ-doping

✍ Scribed by Murel, A. V.; Daniltsev, V. M.; Demidov, E. V.; Drozdov, M. N.; Shashkin, V. I.

• Book ID: 121607501
• Publisher: Springer
• Year: 2013
• Tongue: English
• Weight: 222 KB
• Volume: 47
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/S106378261311016X