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Effect of proton fluence on point defect formation in epitaxial silicon for radiation detectors

✍ Scribed by R. Kozłowski; P. Kamiński; E. Nossarzewska-Orłowska; E. Fretwurst; G. Lindstroem; M. Pawłowski


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
254 KB
Volume
552
Category
Article
ISSN
0168-9002

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