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Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

✍ Scribed by W. V. Lundin; E. E. Zavarin; M. A. Sinitsyn; A. V. Sakharov; S. O. Usov; A. E. Nikolaev; D. V. Davydov; N. A. Cherkashin; A. F. Tsatsulnikov

Book ID: 111444542
Publisher: Springer
Year: 2010
Tongue: English
Weight: 236 KB
Volume: 44
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782610010215

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