Effect of polarization on the surface damage morphology of GaAs single crystal during irradiation with picosecond laser pulses

✍ Scribed by Amit Pratap Singh; Avinashi Kapoor; K.N. Tripathi; G.Ravindra Kumar

• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 378 KB
• Volume: 34
• Category: Article
• ISSN: 0030-3992
• DOI: 10.1016/s0030-3992(01)00087-1

✦ Synopsis

A comparative study of damage morphology in GaAs induced by s-, p-and linearly polarized laser light (1:064 m; 35 ps) is presented. For linearly polarized light damage initiates in the form of pits. This material damage occurs below the surface. For s-or p-polarized light material damage involves only the surface layer. For larger uences or number of pulses the di erences are less marked and the damage morphology occurs in a similar manner either for linearly polarized or s-or p-polarized light. Ripples are formed when multiple irradiation is used due to interference between the front and back faces of the test sample. The spacing of these ripples is 3 m, which is in good accordance with the reported work of Guosheng et al. (Phys. Rev.