Interconnection loss from substrate effe
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S.-C. Tseng; C. C. Meng; H.-Y. Liao; Y.-C. Lin; Y.-H. Teng
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Article
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2009
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John Wiley and Sons
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English
⚖ 375 KB
## Abstract A 5.2 GHz 0.18‐μm SiGe BiCMOS low noise amplifier is implemented with guided‐wave interconnections in this letter. These interconnections reduce the substrate skin and proximity effects and hence are suitable for high frequency circuits. The guided interconnections bring 1.7‐dB gain and