In Part I we reported the results of an emission spectroscopic study of the plasma obtained in an SiH 4 -N 2 -Ar mixture. It was shown that argon in metastable electronic excited states provides a high concentration of atomic nitrogen. In this part we report the results of a study of the influence o
โฆ LIBER โฆ
Effect of oxygen on structural stability of nitrogen-doped germanium telluride films with and without silicon nitride layer
โ Scribed by Ki-Hong Kim; Sang-Jun Choi; Yong-Koo Kyoung; Jun-Ho Lee
- Book ID
- 113937566
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 681 KB
- Volume
- 520
- Category
- Article
- ISSN
- 0040-6090
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In a series of two papers we describe the effect of argon dilution of the nitrogen passed through the RF discharge region on the plasma composition, growth rate and some characteristics of silicon nitride films deposited by remove PECVD. In this part we report the results of an emission spectroscopi