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Effect of oxygen and hydrogen impurities on germanium microhardness

✍ Scribed by N. N. Novikov; M. V. Khimenko

Book ID
112480710
Publisher
Springer
Year
1970
Tongue
English
Weight
288 KB
Volume
13
Category
Article
ISSN
1573-9228

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The production and annealing of oxygen and carbon related defects in electron-irradiated Ge-doped Czochralski silicon have been studied by means of IR spectroscopy. The results demonstrate that the role of Ge changes with increasing Ge content. At low Ge concentrations, much less than 10 20 cm Γ€3 ,