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Effect of on band alignment of compressively strained Ga1−xInxNy As1−y−zSbz/GaAs quantum well structures

✍ Scribed by A. Aissat; S. Nacer; M. Seghilani; J.P. Vilcot

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 314 KB
Volume: 43
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2010.06.016

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