Effect of nitrogen ion implantation on the electrochemical behaviour of TA6V in sulphuric medium

✍ Scribed by A.M. De Becdelievre; D. Fleche; J. De Becdelievre

• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 499 KB
• Volume: 33
• Category: Article
• ISSN: 0013-4686
• DOI: 10.1016/0013-4686(88)80196-8

✦ Synopsis

We have compared, using cycling voltammetry, the corrosion resistance in (1 M) H,S04 solutions of TA6V alloy prior to and after N+ ion implantation of unalloyed titanium and of PVD nitrided titanium. The superlicial oxides grown during polarization were analysed using GDOS technique: concentration profiles exhibit an enrichment in V and Al on implanted TA6V samples. After a long polarization time at 3 V us see the Al enrichment disappears and an important incorporation of sulphur arises. The analysis of the acid solution reveals the preferential dissolution of Al. N+ implantation induces the formation of a TiN layer which acts as a diffusion barrier for Ti4+: the oxide layer is thinner.