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Effect of negative chemical pressure on some displacive-type ferroelectrics

✍ Scribed by S. V. Baryshnikov; É. V. Bursian; V. V. Kazakov

Book ID
110119048
Publisher
SP MAIK Nauka/Interperiodica
Year
1999
Tongue
English
Weight
38 KB
Volume
41
Category
Article
ISSN
1063-7834

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The properties of the MgZnO nanocrystalline thin films deposited on c-Al 2 O 3 substrates by metalorganic chemical vapor deposition (MOCVD) at various oxygen partial pressures (Po 2 ) were thoroughly studied. It was found that the nanocrystalline films grown in the oxygen partial pressure range from