๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Effect of nano-SiC dispersion on thermoelectric properties of Bi2Te3polycrystals

โœ Scribed by Li, Jing-Feng ;Liu, Jing


Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
302 KB
Volume
203
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

โœฆ Synopsis


Abstract

Nanoโ€SiC dispersed Bi~2~Te~3~ was synthesized by mechanical alloying (MA) followed by spark plasma sintering (SPS). The effects of SiC dispersion on the thermoelectric properties of the SPSโ€sintered Bi~2~Te~3~ alloys were investigated. The results revealed that SiC dispersion in the Bi~2~Te~3~ matrix increased the absolute value of Seebeck coefficient. Although the electrical resistance was increased somewhat, Bi~2~Te~3~ with 0.1 wt% SiC showed a higher power factor than Bi~2~Te~3~ without SiC. Because the dispersion of SiC nanoโ€particles reduced the thermal conductivity at the same time, 0.1 wt% (โˆผ0.24 vol% SiC) addition of SiC nanoโ€particles increased the figure of merit of Bi~2~Te~3~ by 18%. (ยฉ 2006 WILEYโ€VCH Verlag GmbH & Co. KGaA, Weinheim)


๐Ÿ“œ SIMILAR VOLUMES


Thermoelectric properties of MeV Si ion
โœ B. Zheng; Z. Xiao; B. Chhay; R.L. Zimmerman; Matthew E. Edwards; D. ILA ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 906 KB

In order to keep the stoichiometry of Bi 2 Te 3 and Sb 2 Te 3 , with the purpose of preserving the electrical and thermal conductivity advantage of the layered structure of bulk Bi 2 Te 3 and Sb 2 Te 3 in each period of the superlattice, magnetron sputtering, which is operated at relatively low temp

Thermoelectric properties of fine-graine
โœ A. A. Joraide ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Springer ๐ŸŒ English โš– 389 KB

P-type semiconductor alloy compacts of the composition (Bi2Te3)25 -(Sb2Te3)75 with grain size (L) in the range 30 > L > 20 lam, 20 > L > 151am, 15 > L > 10 lam, 10 > L > 5 and L < 5 ~tm were prepared by cold press at a pressure of 77 โ€ข 107 Nm -2. The samples were sintered at 673 K. Measurements of t