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Effect of modification of S-terminated Ge(1 0 0) surface on ALD HfO2 gate stack

✍ Scribed by Younghwan Lee; Kibyung Park; Kyung Taek Im; June Young Lee; Seongil Im; Jung Han Lee; Yeonjin Yi; Sangwoo Lim

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 177 KB
Volume: 255
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2009.03.055

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Effect of modification of S-terminated Ge(1&#xa0;0&#xa0;0) surface on ALD HfO2 gate stack

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