Narrow conducting channels have been fabricated in the two dimensional electron gas in a GaAs-AlGaAs heterostructure, using a recently developed shallow mesa etch technique. Four terminal high field magnetoresistance measurements at temperatures down to 2 K have been performed on samples with etched
Effect of magnetic impurities of universal conductance fluctuations
β Scribed by A. Benoit; D. Mailly; P. Perrier; P. Nedellec
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 376 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0749-6036
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