A metal-insulator transition at zero magnetic ÿeld is observed in Ga [Al]As-heterostructures where a high density of self-assembled InAs-quantum dots is located in the region of the two-dimensional electron gas (2DEG). This transition occurs only in samples with high dot densities. In contrast to ot
Effect of magnetic field on metal–insulator transitions in Bi-wire structures
✍ Scribed by M. Chatzichristidi; Th. Speliotis; I. Raptis; I. Haritantis; D. Niarchos; C. Christides
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 804 KB
- Volume
- 84
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
Metal-insulator-like (MI) behavior in semi-metallic Bi-nanowires and single crystals indicate that semimetals exhibit a combination of unusual features of metal-insulating behavior which are accompanied by anomalously high magnetoresistance. These effects make semimetallic Bi a potential candidate for use in magneto-electronic devices. The present study examines the magneto-transport properties of Bi-line structures, focusing on magnetic field driven MI transitions. Conventional patterning and deposition processes are applied for the fabrication of a device that consists of five Bi-lines with line-widths of 2 lm.
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